VISHAY-Single FETs, MOSFETs-SIA421DJ-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V


P-Channel 30V 12A 19W Surface Mount PowerPAK-SC-70-6

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3VP-Channel 30V 12A 19W... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V


    P-Channel 30V 12A 19W Surface Mount PowerPAK-SC-70-6

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