VISHAY-Single FETs, MOSFETs-SIA430DJT-T4-GE3
- VISHAY
Drain to Source Voltage;20V/Gate Charge(Qg);5.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.5W/RDS(on);13.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$0.60 Excl. VAT
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