VISHAY-Single FETs, MOSFETs-SIB433EDK-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7.6nC@8V/Number;1 P-Channel/Pd - Power Dissipation;8.4W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));400mV


20V 58mΩ@4.5V 1 P-Channel 8.4W PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7.6nC@8V/Number;1 P-Channel/Pd - Power Dissipation;8.4W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));400mV20V 58mΩ@4.5V 1 P-Channel... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7.6nC@8V/Number;1 P-Channel/Pd - Power Dissipation;8.4W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));400mV


    20V 58mΩ@4.5V 1 P-Channel 8.4W PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS

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