VISHAY-Single FETs, MOSFETs-SIB433EDK-T1-GE3
- VISHAY
Drain to Source Voltage;20V/Gate Charge(Qg);7.6nC@8V/Number;1 P-Channel/Pd - Power Dissipation;8.4W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));400mV20V 58mΩ@4.5V 1 P-Channel... Read more
$0.60 Excl. VAT
-
Guaranteed secure & safe checkout.