VISHAY-Single FETs, MOSFETs-SIB457EDK-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));400mV


20V 35mΩ@4.5V 1 P-Channel 2.4W PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));400mV20V 35mΩ@4.5V 1 P-Channel... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);13nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));400mV


    20V 35mΩ@4.5V 1 P-Channel 2.4W PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS

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