VISHAY-Single FETs, MOSFETs-SIHB16N50C-E3

Description

Drain to Source Voltage;500V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.9nF


500V 380mΩ@10V 1 N-channel 250W D2PAK(TO-263) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.9nF500V 380mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.9nF


    500V 380mΩ@10V 1 N-channel 250W D2PAK(TO-263) Single FETs, MOSFETs RoHS

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