VISHAY-Single FETs, MOSFETs-SIHB22N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);86nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.92nF


600V 180mΩ@10V 1 N-channel 227W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);86nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);86nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.92nF


    600V 180mΩ@10V 1 N-channel 227W D2PAK Single FETs, MOSFETs RoHS

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