VISHAY-Single FETs, MOSFETs-SIHB33N60E-GE3
- VISHAY
Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.508nF600V 99mΩ@10V 1... Read more
$20.10 Excl. VAT
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