VISHAY-Single FETs, MOSFETs-SIHB33N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.508nF


600V 99mΩ@10V 1 N-channel 278W TO-263-2 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.508nF600V 99mΩ@10V 1... Read more

$20.10 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.508nF


    600V 99mΩ@10V 1 N-channel 278W TO-263-2 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account