VISHAY-Single FETs, MOSFETs-SIHD180N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.08nF


600V 170mΩ@10V 1 N-channel 156W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.08nF


    600V 170mΩ@10V 1 N-channel 156W TO-252 Single FETs, MOSFETs RoHS

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