VISHAY-Single FETs, MOSFETs-SIHD4N80E-GE3

Description

Drain to Source Voltage;800V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;622pF


800V 1.1Ω@10V 1 N-channel 69W DPAK(TO-252AA) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;622pF


    800V 1.1Ω@10V 1 N-channel 69W DPAK(TO-252AA) Single FETs, MOSFETs RoHS

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