VISHAY-Single FETs, MOSFETs-SIHD4N80E-GE3
- VISHAY
Drain to Source Voltage;800V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more
$3.09 Excl. VAT
-
Guaranteed secure & safe checkout.