VISHAY-Single FETs, MOSFETs-SIHD6N62E-GE3

Description

Drain to Source Voltage;620V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;578pF/Output Capacitance(Coss);36pF


620V 900mΩ@10V 1 N-channel 78W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;620V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;620V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;578pF/Output Capacitance(Coss);36pF


    620V 900mΩ@10V 1 N-channel 78W TO-252(DPAK) Single FETs, MOSFETs RoHS

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