VISHAY-Single FETs, MOSFETs-SIHG17N80E-GE3
- VISHAY
Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.408nF800V 250mΩ@10V 1... Read more
$4.47 Excl. VAT
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