VISHAY-Single FETs, MOSFETs-SIHG23N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);95nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;227W/RDS(on);158mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.418nF


600V 158mΩ@10V 1 N-channel 227W TO-247AC-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);95nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;227W/RDS(on);158mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.418nF600V 158mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);95nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;227W/RDS(on);158mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.418nF


    600V 158mΩ@10V 1 N-channel 227W TO-247AC-3 Single FETs, MOSFETs RoHS

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