VISHAY-Single FETs, MOSFETs-SIHG33N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.508nF


600V 99mΩ@10V 1 N-channel 278W TO-247AC-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$19.29 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.508nF


    600V 99mΩ@10V 1 N-channel 278W TO-247AC-3 Single FETs, MOSFETs RoHS

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