VISHAY-Single FETs, MOSFETs-SIHP11N80E-GE3

Description

Drain to Source Voltage;800V/Gate Charge(Qg);88nC@10V/Number;1 N-channel/Pd - Power Dissipation;179W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.67nF


800V 380mΩ@10V 1 N-channel 179W TO-220AB-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);88nC@10V/Number;1 N-channel/Pd - Power Dissipation;179W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);88nC@10V/Number;1 N-channel/Pd - Power Dissipation;179W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.67nF


    800V 380mΩ@10V 1 N-channel 179W TO-220AB-3 Single FETs, MOSFETs RoHS

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