VISHAY-Single FETs, MOSFETs-SIHP17N80E-GE3

Description

Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.408nF


800V 250mΩ@10V 1 N-channel 208W TO-220AB-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$8.88 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.408nF


    800V 250mΩ@10V 1 N-channel 208W TO-220AB-3 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account