VISHAY-Single FETs, MOSFETs-SIHP30N60E-GE3

Description

Drain to Source Voltage;600V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.6nF


600V 125mΩ@10V 1 N-channel 250W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.6nF


    600V 125mΩ@10V 1 N-channel 250W TO-220 Single FETs, MOSFETs RoHS

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