VISHAY-Single FETs, MOSFETs-SIJ478DP-T1-GE3

Description

Drain to Source Voltage;80V/Gate Charge(Qg);17.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);11.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;1.855nF/Output Capacitance(Coss);950pF


80V 11.5mΩ@4.5V 1 N-channel 62.5W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);17.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);11.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);17.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);11.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;1.855nF/Output Capacitance(Coss);950pF


    80V 11.5mΩ@4.5V 1 N-channel 62.5W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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