VISHAY-Single FETs, MOSFETs-SIR466DP-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;5W;54W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;2.73nF


N-Channel 30V 40A 5W 54W Surface Mount PowerPAK-SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;5W;54W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;2.73nFN-Channel 30V 40A... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;5W;54W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;2.73nF


    N-Channel 30V 40A 5W 54W Surface Mount PowerPAK-SO-8

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