VISHAY-Single FETs, MOSFETs-SIR688DP-T1-GE3

Description

Drain to Source Voltage;60V/Gate Charge(Qg);20.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;5.4W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);29.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;3.105nF


60V 3.5mΩ@10V 1 N-channel 5.4W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);20.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;5.4W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);29.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more

$14.64 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);20.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;5.4W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);29.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;3.105nF


    60V 3.5mΩ@10V 1 N-channel 5.4W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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