VISHAY-Single FETs, MOSFETs-SIR690DP-T1-GE3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;6.25W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31.9pF/Current - Continuous Drain(Id);34.4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.935nF


N-Channel 200V 34.4A 6.25W Surface Mount PowerPAKSO-8

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;6.25W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31.9pF/Current - Continuous Drain(Id);34.4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;6.25W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31.9pF/Current - Continuous Drain(Id);34.4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.935nF


    N-Channel 200V 34.4A 6.25W Surface Mount PowerPAKSO-8

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