VISHAY-Single FETs, MOSFETs-SIR846ADP-T1-GE3

Description

Drain to Source Voltage;100V/Gate Charge(Qg);26.7nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;53W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;2.35nF


100V 1 N-channel 53W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);26.7nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;53W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$4.65 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);26.7nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;53W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;2.35nF


    100V 1 N-channel 53W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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