VISHAY-Single FETs, MOSFETs-SIR871DP-T1-GE3

Description

Drain to Source Voltage;100V/Gate Charge(Qg);26.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;3.395nF


100V 20mΩ@10V 1 P-Channel 5.2W PowerPAK-SO-8-Single Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);26.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);26.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;3.395nF


    100V 20mΩ@10V 1 P-Channel 5.2W PowerPAK-SO-8-Single Single FETs, MOSFETs RoHS

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