VISHAY-Single FETs, MOSFETs-SIS407ADN-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);63nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.7W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);168pF/Current - Continuous Drain(Id);16.7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;5.875nF


20V 9mΩ@4.5V 1 P-Channel 3.7W PowerPAK1212-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);63nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.7W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);168pF/Current - Continuous Drain(Id);16.7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

$1.83 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);63nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.7W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);168pF/Current - Continuous Drain(Id);16.7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;5.875nF


    20V 9mΩ@4.5V 1 P-Channel 3.7W PowerPAK1212-8 Single FETs, MOSFETs RoHS

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