VISHAY-Single FETs, MOSFETs-SIS410DN-T1-GE3

Description

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);6.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);500pF


20V 6.3mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);6.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);500pF20V 6.3mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);6.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);500pF


    20V 6.3mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

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