VISHAY-Single FETs, MOSFETs-SIS435DNT-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;3.7W;39W/RDS(on);5.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;5.7nF


20V 5.4mΩ@4.5V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;3.7W;39W/RDS(on);5.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;5.7nF20V 5.4mΩ@4.5V 1... Read more

$2.55 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;3.7W;39W/RDS(on);5.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;5.7nF


    20V 5.4mΩ@4.5V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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