VISHAY-Single FETs, MOSFETs-SIS468DN-T1-GE3

Description

Drain to Source Voltage;80V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V


80V 32mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V80V 32mΩ@4.5V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V


    80V 32mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

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