VISHAY-Single FETs, MOSFETs-SIS892DN-T1-GE3
- VISHAY
Drain to Source Voltage;100V/Gate Charge(Qg);6.7nC/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);29mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more
$6.78 Excl. VAT
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