VISHAY-Single FETs, MOSFETs-SISA72DN-T1-GE3

Description

Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);4.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);455pF


40V 4.8mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);4.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);4.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;3.24nF/Output Capacitance(Coss);455pF


    40V 4.8mΩ@4.5V 1 N-channel 52W PowerPAK1212-8 Single FETs, MOSFETs RoHS

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