VISHAY-Single FETs, MOSFETs-SISA96DN-T1-GE3
- VISHAY
Drain to Source Voltage;30V/Gate Charge(Qg);31nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;26.5W/RDS(on);8.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more
$0.90 Excl. VAT
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