VISHAY-Single FETs, MOSFETs-SISS40DN-T1-GE3
- VISHAY
Drain to Source Voltage;100V/Gate Charge(Qg);18.5nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;845pF100V 21mΩ@10V 1... Read more
$0.90 Excl. VAT
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