VISHAY-Single FETs, MOSFETs-SISS40DN-T1-GE3

Description

Drain to Source Voltage;100V/Gate Charge(Qg);18.5nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;845pF


100V 21mΩ@10V 1 N-channel 3.7W PowerPAK1212-8S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);18.5nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;845pF100V 21mΩ@10V 1... Read more

$0.90 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);18.5nC@7.5V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;845pF


    100V 21mΩ@10V 1 N-channel 3.7W PowerPAK1212-8S Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account