VISHAY-Single FETs, MOSFETs-SQD50N10-8M9L_GE3

Description

Drain to Source Voltage;100V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);8.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);124pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.95nF/Output Capacitance(Coss);1.441nF


N-Channel 100V 50A 136W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);8.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);124pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);8.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);124pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.95nF/Output Capacitance(Coss);1.441nF


    N-Channel 100V 50A 136W Surface Mount TO-252

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