VISHAY-Single FETs, MOSFETs-SQJ412EP-T1_GE3

Description

Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);5.2mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.95nF/Output Capacitance(Coss);760pF


40V 5.2mΩ@4.5V 1 N-channel 83W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);5.2mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);5.2mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.95nF/Output Capacitance(Coss);760pF


    40V 5.2mΩ@4.5V 1 N-channel 83W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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