VISHAY-Single FETs, MOSFETs-SUP90142E-GE3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);15.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.12nF


200V 15.2mΩ@10V 1 N-channel 125W TO-220AB-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);15.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);15.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.12nF


    200V 15.2mΩ@10V 1 N-channel 125W TO-220AB-3 Single FETs, MOSFETs RoHS

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