Wayon-Single FETs, MOSFETs-WMB080N10HG2

Description

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Type;N-Channel/Pd - Power Dissipation;80.6W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);74A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF/Output Capacitance(Coss);370pF


100V 8mΩ@10V 80.6W TDSON-8(5.1x5.9) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Type;N-Channel/Pd - Power Dissipation;80.6W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);74A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF/Output... Read more

$2.55 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Type;N-Channel/Pd - Power Dissipation;80.6W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);74A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF/Output Capacitance(Coss);370pF


    100V 8mΩ@10V 80.6W TDSON-8(5.1x5.9) Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account