Wayon-Single FETs, MOSFETs-WML15N65C4

Description

Drain to Source Voltage;650V/Gate Charge(Qg);14.6nC@10V/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;770pF


N-Channel 650V 13A 31W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);14.6nC@10V/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;770pFN-Channel... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);14.6nC@10V/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.6pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;770pF


    N-Channel 650V 13A 31W Through Hole TO-220F

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