Wayon-Single FETs, MOSFETs-WML30N65EM

Description

Drain to Source Voltage;650V/Gate Charge(Qg);18nC@10V/Type;N-Channel/Pd - Power Dissipation;34W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.91nF


650V 160mΩ@10V 34W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);18nC@10V/Type;N-Channel/Pd - Power Dissipation;34W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.91nF650V 160mΩ@10V 34W TO-220F... Read more

$4.50 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);18nC@10V/Type;N-Channel/Pd - Power Dissipation;34W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.91nF


    650V 160mΩ@10V 34W TO-220F Single FETs, MOSFETs RoHS

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