Wayon-Single FETs, MOSFETs-WMN26N60C4

Description

Drain to Source Voltage;600V/Gate Charge(Qg);22.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;135W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.31nF


600V 160mΩ@10V 1 N-channel 135W TO-262-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);22.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;135W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);22.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;135W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.31nF


    600V 160mΩ@10V 1 N-channel 135W TO-262-3 Single FETs, MOSFETs RoHS

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