WILLSEMI-Single FETs, MOSFETs-WNM01N11-6/TR

Description

Drain to Source Voltage;110V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15.6pF/Current - Continuous Drain(Id);2.13A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;300pF/Output Capacitance(Coss);25.6pF


N-Channel 110V 2.13A 2.5W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;110V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15.6pF/Current - Continuous Drain(Id);2.13A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;110V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15.6pF/Current - Continuous Drain(Id);2.13A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;300pF/Output Capacitance(Coss);25.6pF


    N-Channel 110V 2.13A 2.5W Surface Mount SOT-23-6L

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