WILLSEMI-Single FETs, MOSFETs-WNM3025-3/TR

Description

Drain to Source Voltage;50V/Gate Charge(Qg);1.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;23pF/Output Capacitance(Coss);12pF


N-Channel 50V 0.23A 0.32W Surface Mount DFN1006-3L

Product form

Drain to Source Voltage;50V/Gate Charge(Qg);1.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;50V/Gate Charge(Qg);1.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;23pF/Output Capacitance(Coss);12pF


    N-Channel 50V 0.23A 0.32W Surface Mount DFN1006-3L

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