WILLSEMI-Single FETs, MOSFETs-WNM3053-3/TR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);144pF/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;1.25nF


30V 9mΩ@4.5V 1 N-channel 3.1W SOP-8L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);144pF/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);144pF/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;1.25nF


    30V 9mΩ@4.5V 1 N-channel 3.1W SOP-8L Single FETs, MOSFETs RoHS

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