WILLSEMI-Single FETs, MOSFETs-WNM3056-6/TR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.4W/RDS(on);24mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);114pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.786nF/Output Capacitance(Coss);151pF


N-Channel 30V 11.6A 3.4W Surface Mount DFN2x2-6L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.4W/RDS(on);24mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);114pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);20nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.4W/RDS(on);24mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);114pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.786nF/Output Capacitance(Coss);151pF


    N-Channel 30V 11.6A 3.4W Surface Mount DFN2x2-6L

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