WILLSEMI-Single FETs, MOSFETs-WNM3602A-6/TR

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.6W/RDS(on);7.7mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.8pF/Current - Continuous Drain(Id);20.4A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;854pF


30V 7.7mΩ@4.5V 1 N-channel 3.6W DFN-6L(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.6W/RDS(on);7.7mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.8pF/Current - Continuous Drain(Id);20.4A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;854pF30V... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.6W/RDS(on);7.7mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.8pF/Current - Continuous Drain(Id);20.4A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;854pF


    30V 7.7mΩ@4.5V 1 N-channel 3.6W DFN-6L(2x2) Single FETs, MOSFETs RoHS

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