WILLSEMI-Single FETs, MOSFETs-WNM4006-3/TR

Description

Drain to Source Voltage;45V/Gate Charge(Qg);4.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);126mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;315pF/Output Capacitance(Coss);18pF


45V 126mΩ@10V 1 N-channel 700mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;45V/Gate Charge(Qg);4.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);126mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;315pF/Output Capacitance(Coss);18pF45V... Read more

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    Description

    Drain to Source Voltage;45V/Gate Charge(Qg);4.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);126mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;315pF/Output Capacitance(Coss);18pF


    45V 126mΩ@10V 1 N-channel 700mW SOT-23 Single FETs, MOSFETs RoHS

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