WILLSEMI-Single FETs, MOSFETs-WNM6012-3/TR

Description

Drain to Source Voltage;60V/Gate Charge(Qg);3.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.008W/RDS(on);24Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);700fF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;9.4pF/Output Capacitance(Coss);2.2pF


N-Channel 60V 250mA 1008mW Surface Mount DFN1006-3L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);3.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.008W/RDS(on);24Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);700fF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

$1.92 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);3.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.008W/RDS(on);24Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);700fF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;9.4pF/Output Capacitance(Coss);2.2pF


    N-Channel 60V 250mA 1008mW Surface Mount DFN1006-3L

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