WILLSEMI-Single FETs, MOSFETs-WNMD2055-6/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);18.2nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;20W/RDS(on);8.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);211pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;1.6nF


20V 8.2mΩ@4.5V 2 N-Channel 20W DFN-6L(2x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);18.2nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;20W/RDS(on);8.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);211pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);18.2nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;20W/RDS(on);8.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);211pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;1.6nF


    20V 8.2mΩ@4.5V 2 N-Channel 20W DFN-6L(2x3) Single FETs, MOSFETs RoHS

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