WILLSEMI-Single FETs, MOSFETs-WNMD2056-8/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;23W/RDS(on);4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Configuration;Common source/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;2.231nF


20V 4.1mΩ@4.5V 2 N-Channel 23W DFN-8L(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;23W/RDS(on);4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Configuration;Common source/Current - Continuous Drain(Id);26A/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;23W/RDS(on);4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Configuration;Common source/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;2.231nF


    20V 4.1mΩ@4.5V 2 N-Channel 23W DFN-8L(3x3) Single FETs, MOSFETs RoHS

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