WILLSEMI-Single FETs, MOSFETs-WNMD2176-6/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));780mV/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);45pF


N-Channel Array 20V 2.6A 1.1W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));780mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));780mV/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);45pF


    N-Channel Array 20V 2.6A 1.1W Surface Mount SOT-23-6L

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