WILLSEMI-Single FETs, MOSFETs-WPM1480-3/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290mW/RDS(on);405mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);51pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;480pF


P-Channel 20V 1.4A 0.29W Surface Mount SOT-323

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290mW/RDS(on);405mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);51pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290mW/RDS(on);405mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);51pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;480pF


    P-Channel 20V 1.4A 0.29W Surface Mount SOT-323

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