WILLSEMI-Single FETs, MOSFETs-WPM2006-6/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.45W/RDS(on);150mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);46pF


P-Channel 20V 3A 1.45W Surface Mount DFN2x2-6L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.45W/RDS(on);150mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.45W/RDS(on);150mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);46pF


    P-Channel 20V 3A 1.45W Surface Mount DFN2x2-6L

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