WILLSEMI-Single FETs, MOSFETs-WPM2092-3/TR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));450mV


20V 1 P-Channel 320mW DFN-3L(1x0.6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));450mV20V... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));450mV


    20V 1 P-Channel 320mW DFN-3L(1x0.6) Single FETs, MOSFETs RoHS

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